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Chin. Phys. B, 2017, Vol. 26(3): 037201    DOI: 10.1088/1674-1056/26/3/037201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Lei Wang(王磊)1, Jiaqi Zhang(张家琦)1, Liuan Li(李柳暗)2, Yutaro Maeda(前田裕太郎)1, Jin-Ping Ao(敖金平)1
1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Abstract  

In this study, a low-temperature annealed ohmic contact process was proposed on AlGaN/GaN heterostructure field effect transistors (HFETs) with the assistance of inductively coupled plasma (ICP) surface treatment. The effect of ICP treatment process on the 2DEG channel as well as the formation mechanism of the low annealing temperature ohmic contact was investigated. An appropriate residual AlGaN thickness and a plasma-induced damage are considered to contribute to the low-temperature annealed ohmic contact. By using a single Al layer to replace the conventional Ti/Al stacks, ohmic contact with a contact resistance of 0.35 Ω·mm was obtained when annealed at 575℃ for 3 min. Good ohmic contact was also obtained by annealing at 500℃ for 20 min.

Keywords:  AlGaN/GaN HFET      low-temperature ohmic contact      inductively coupled plasma (ICP)      surface treatment  
Received:  26 October 2016      Revised:  23 December 2016      Accepted manuscript online: 
PACS:  72.20.Dp (General theory, scattering mechanisms)  
  73.61.Ey (III-V semiconductors)  
  81.15.Cd (Deposition by sputtering)  
  81.65.Cf (Surface cleaning, etching, patterning)  
Corresponding Authors:  Jin-Ping Ao, Liuan Li     E-mail:  jpao@ee.tokushima-u.ac.jp;liliuan@mail.sysu.edu.cn

Cite this article: 

Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平) Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors 2017 Chin. Phys. B 26 037201

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