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Chin. Phys. B, 2017, Vol. 26(9): 096102    DOI: 10.1088/1674-1056/26/9/096102

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

Jia-Nan Wei(魏佳男)1, Hong-Xia Guo(郭红霞)1,2, Feng-Qi Zhang(张凤祁)2, Yin-Hong Luo(罗尹虹)2, Li-Li Ding(丁李利)2, Xiao-Yu Pan(潘霄宇)2, Yang Zhang(张阳)1, Yu-Hui Liu(刘玉辉)1
1 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Northwest Institute of Nuclear Technology, Xi'an 710024, China
Abstract  The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work. The test specimens were firstly subjected to 60Co γ-ray and then the SEU evaluation was conducted using 209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.
Keywords:  ferroelectric random access memory      ionizing radiation effect      single event upset  
Received:  14 February 2017      Revised:  03 May 2017      Accepted manuscript online: 
PACS:  61.80.Ed (γ-ray effects)  
  61.80.Jh (Ion radiation effects)  
  85.50.Gk (Non-volatile ferroelectric memories)  
Corresponding Authors:  Jia-Nan Wei     E-mail:

Cite this article: 

Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉) Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory 2017 Chin. Phys. B 26 096102

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