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Chin. Phys. B, 2013, Vol. 22(2): 029402    DOI: 10.1088/1674-1056/22/2/029402

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明)
College of Computer, National University of Defense Technology, Changsha 410073, China
Abstract  Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.
Keywords:  single event upset      multi-node charge collection      recovery      ultra-low ower voltage  
Received:  03 May 2012      Revised:  08 July 2012      Accepted manuscript online: 
PACS:  94.05.Dd (Radiation processes)  
  85.30.Tv (Field effect devices)  
  02.60.Cb (Numerical simulation; solution of equations)  
Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Hunan Provincial Innovation Foundation for Postgraduate, China (Grant No. CX2011B026).
Corresponding Authors:  Qin Jun-Rui     E-mail:

Cite this article: 

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明) Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells 2013 Chin. Phys. B 22 029402

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