Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells

doi:10.1088/1674-1056/21/2/029401

Abstract Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.

Keywords: single event upset multi-node charge collection static random access memory angular dependence

Received: 07 July 2011
Revised: 19 September 2011
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070).

Corresponding Authors: Qin Jun-Rui,qinjr@nudt.edu.cn
E-mail: qinjr@nudt.edu.cn

Cite this article:

Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰) Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells 2012 Chin. Phys. B 21 029401

[1]	Uemura T, Tosaka Y and Satoh S 2006 Jpn. J. Appl. Phys. 45 3256
[2]	He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H and Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese)
[3]	Li H 2006 Acta Phys. Sin. 55 3540 (in Chinese)
[4]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2009 Acta Phys. Sin. 59 649 (in Chinese)
[5]	Rodbell K P, Heidel D F, Tang H H K, Gordon M S, Oldiges P and Murray C E 2007 IEEE Trans. Nucl. Sci. 54 2474
[6]	Baumann R C and Radaelli D 2007 IEEE Trans. Nucl. Sci. 54 2141
[7]	Roche P and Gasiot G 2005 IEEE Trans. Dev. Mater. Reliab. 5 382
[8]	Narasimham B, Amusan O A, Bhuva B L, Schrimpf R D and Holman W T 2008 IEEE Trans. Nucl. Sci. 55 3077
[9]	Amusan O A, Sternberg A L, Witulski A F, Bhuva B L, Black J D, Baze M P and Massengill L W 2007 Proc. 45th Int. Reliab. Phys. Symp. Arizona, USA pp. 306-311
[10]	Amusan O A, Massengill L W, Baze M P, Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C and Alles M L 2007 IEEE Trans. Nucl. Sci. 54 2584
[11]	Baumann R 2005 IEEE Des. Test Comput. 22 258
[12]	Granlund T, Granbom B and Olsson N 2003 IEEE Trans. Nucl. Sci. 50 2065
[13]	Black J D, Ball II D R, Robinson W H, Fleetwood D M, Schrimpf R D, Reed R A, Black D A, Warren K M, Tipton A D, Dodd P E, Haddad N F, Xapsos M A, Kim H S and Friendlich M 2008 IEEE Trans. Nucl. Sci. 55 2943
[14]	Atkinson N M 2010 Single-Event Characterization of a 90-nm Bulk CMOS Digital Cell Library, M. S. thesis Dept. Elect. Eng. Vanderbilt University, USA
[15]	Turowski M, Raman A and Jablonski G 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems Ciechocinek, Poland
[16]	Black J D, Sternberg A L, Alles M L, Witulski A F, Bhuva B L, Massengill L W, Benedetto J M, Baze M P, Wert J L and Hubert M G 2005 IEEE Trans. Nucl. Sci. 52 2536

[1]	Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Chin. Phys. B, 2022, 31(5): 056106.
[2]	Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌). Chin. Phys. B, 2022, 31(12): 126103.
[3]	Influences of supply voltage on single event upsets and multiple-cell upsets in nanometer SRAM across a wide linear energy transfer range Yin-Yong Luo(罗尹虹), Wei Chen(陈伟), Feng-Qi Zhang(张凤祁), and Tan Wang(王坦). Chin. Phys. B, 2021, 30(4): 048502.
[4]	Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM Li-Hua Mo(莫莉华), Bing Ye(叶兵), Jie Liu(刘杰), Jie Luo(罗捷), You-Mei Sun(孙友梅), Chang Cai(蔡畅), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), and Ze He(贺泽). Chin. Phys. B, 2021, 30(3): 036103.
[5]	Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰). Chin. Phys. B, 2020, 29(2): 026101.
[6]	Model of output characteristics of giant magnetoresistance (GMR) multilayer sensor Jiao-Feng Zhang(张教凤), Zheng-Hong Qian(钱正洪), Hua-Chen Zhu(朱华辰), Ru Bai(白茹), Jian-Guo Zhu(朱建国). Chin. Phys. B, 2019, 28(8): 087501.
[7]	Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory Jin-Shun Bi(毕津顺), Kai Xi(习凯), Bo Li(李博), Hai-Bin Wang(王海滨), Lan-Long Ji(季兰龙), Jin Li(李金), Ming Liu(刘明). Chin. Phys. B, 2018, 27(9): 098501.
[8]	Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展). Chin. Phys. B, 2017, 26(9): 096103.
[9]	Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉). Chin. Phys. B, 2017, 26(9): 096102.
[10]	Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell Bing Ye(叶兵), Jie Liu(刘杰), Tie-Shan Wang(王铁山), Tian-Qi Liu(刘天奇), Jie Luo(罗捷), Bin Wang(王斌), Ya-Nan Yin(殷亚楠), Qing-Gang Ji(姬庆刚), Pei-Pei Hu(胡培培), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东). Chin. Phys. B, 2017, 26(8): 088501.
[11]	Pattern dependence in synergistic effects of total dose onsingle-event upset hardness Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明). Chin. Phys. B, 2016, 25(9): 096109.
[12]	Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation Zheng Qi-Wen (郑齐文), Cui Jiang-Wei (崔江维), Zhou Hang (周航), Yu De-Zhao (余德昭), Yu Xue-Feng (余学峰), Lu Wu (陆妩), Guo Qi (郭旗), Ren Di-Yuan (任迪远). Chin. Phys. B, 2015, 24(10): 106106.
[13]	Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect Geng Chao (耿超), Xi Kai (习凯), Liu Tian-Qi (刘天奇), Gu Song (古松), Liu Jie (刘杰). Chin. Phys. B, 2014, 23(8): 086104.
[14]	Types of the jump phenomenon in the angular dependence of the noncollinear exchange bias Yang Hong-Ping (杨红萍), Bai Yu-Hao (白宇浩). Chin. Phys. B, 2014, 23(6): 067503.
[15]	Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明). Chin. Phys. B, 2014, 23(11): 118503.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells

Cite this article:

Online attention