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Chin. Phys. B, 2012, Vol. 21(2): 029401    DOI: 10.1088/1674-1056/21/2/029401

Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells

Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰)
College of Computer, National University of Defense Technology, Changsha 410073, China
Abstract  Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.
Keywords:  single event upset      multi-node charge collection      static random access memory      angular dependence  
Received:  07 July 2011      Revised:  19 September 2011      Accepted manuscript online: 
PACS:  94.05.Dd (Radiation processes)  
  85.30.Tv (Field effect devices)  
  02.60.Cb (Numerical simulation; solution of equations)  
Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070).
Corresponding Authors:  Qin Jun-Rui,     E-mail:

Cite this article: 

Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰) Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells 2012 Chin. Phys. B 21 029401

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