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Chinese Physics, 2004, Vol. 13(6): 948-953    DOI: 10.1088/1009-1963/13/6/028
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A novel technique for predicting ionizing radiation effects of commercial MOS devices

Zhang Guo-Qiang (张国强)a, Guo Qi (郭旗)b, Erkin (艾尔肯)b, Lu Wu (陆妩)b, Ren Di-Yuan (任迪远)b
a Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; b Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
Abstract  A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.
Keywords:  prediction      ionizing radiation effects      commercial MOS devices      regression  
Received:  04 September 2003      Revised:  13 February 2004      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  61.80.Jh (Ion radiation effects)  
  61.82.Fk (Semiconductors)  

Cite this article: 

Zhang Guo-Qiang (张国强), Guo Qi (郭旗), Erkin (艾尔肯), Lu Wu (陆妩), Ren Di-Yuan (任迪远) A novel technique for predicting ionizing radiation effects of commercial MOS devices 2004 Chinese Physics 13 948

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