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Chin. Phys. B, 2017, Vol. 26(8): 088501    DOI: 10.1088/1674-1056/26/8/088501

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Bing Ye(叶兵)1,2,3, Jie Liu(刘杰)1, Tie-Shan Wang(王铁山)3, Tian-Qi Liu(刘天奇)1,2, Jie Luo(罗捷)1,2, Bin Wang(王斌)1,2, Ya-Nan Yin(殷亚楠)1,2, Qing-Gang Ji(姬庆刚)1,2, Pei-Pei Hu(胡培培)1,2, You-Mei Sun(孙友梅)1, Ming-Dong Hou(侯明东)1
1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences (UCAS), Beijing 100049, China;
3 Lanzhou University, Lanzhou 730000, China

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.

Keywords:  single event upset      energy straggle      proton irradiation      nanodevice  
Received:  13 March 2017      Revised:  25 April 2016      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  61.82.Fk (Semiconductors)  
  25.40.Ep (Inelastic proton scattering)  

Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041 and 11675233).

Corresponding Authors:  Jie Liu     E-mail:
About author:  0.1088/1674-1056/26/8/

Cite this article: 

Bing Ye(叶兵), Jie Liu(刘杰), Tie-Shan Wang(王铁山), Tian-Qi Liu(刘天奇), Jie Luo(罗捷), Bin Wang(王斌), Ya-Nan Yin(殷亚楠), Qing-Gang Ji(姬庆刚), Pei-Pei Hu(胡培培), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东) Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell 2017 Chin. Phys. B 26 088501

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