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Chin. Phys. B, 2021, Vol. 30(3): 036103    DOI: 10.1088/1674-1056/abccb3

Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

Li-Hua Mo(莫莉华)1,2, Bing Ye(叶兵)1,2,†, Jie Liu(刘杰)1,2,‡, Jie Luo(罗捷)1,2, You-Mei Sun(孙友梅)1,2, Chang Cai(蔡畅)1,2, Dong-Qing Li(李东青)1,2, Pei-Xiong Zhao(赵培雄)1,2, and Ze He(贺泽)1,2
1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  Three-dimensional integrated circuits (3D ICs) have entered into the mainstream due to their high performance, high integration, and low power consumption. When used in atmospheric environments, 3D ICs are irradiated inevitably by neutrons. In this paper, a 3D die-stacked SRAM device is constructed based on a real planar SRAM device. Then, the single event upsets (SEUs) caused by neutrons with different energies are studied by the Monte Carlo method. The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV. The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent, but the specific values are different. The SEU cross-section is shown to be dependent on the threshold of linear energy transfer ($\mathrmLET_\rm th$) and thickness of the sensitive volume ($\mathrmT_\rm sv$). The secondary particle distribution and energy deposition are analyzed, and the internal mechanism that is responsible for this difference is illustrated. Besides, the ratio and patterns of multiple bit upset (MBU) caused by neutrons with different energies are also presented. This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.
Keywords:  neutron      three-dimension ICs      single event upset      multi-bit upset      Geant4  
Received:  02 September 2020      Revised:  11 November 2020      Accepted manuscript online:  23 November 2020
PACS:  61.82.Fk (Semiconductors)  
  61.80.Jh (Ion radiation effects)  
  42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 111690041, and 11675233) and the Project of Science and Technology on Analog Integrated Circuit Laboratory, China ((Grant No. 6142802WD201801).
Corresponding Authors:  Corresponding author. E-mail: Corresponding author. E-mail:   

Cite this article: 

Li-Hua Mo(莫莉华), Bing Ye(叶兵), Jie Liu(刘杰), Jie Luo(罗捷), You-Mei Sun(孙友梅), Chang Cai(蔡畅), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), and Ze He(贺泽) Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM 2021 Chin. Phys. B 30 036103

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