Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

doi:10.1088/1674-1056/23/11/118503

Abstract Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

Keywords: single event upset total dose static random access memory imprint effect

Received: 13 February 2014
Revised: 14 May 2014
Accepted manuscript online:

PACS:

85.30.De

(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201306).

Corresponding Authors: Xiao Yao
E-mail: nint_xiaoyao@foxmail.com

Cite this article:

Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明) Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation 2014 Chin. Phys. B 23 118503

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Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

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