Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

doi:10.1088/1674-1056/26/8/084202

Abstract

We report on the resonance fluorescence (RF) from single InAs quantum dots (QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond (ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.

Keywords: quantum dots resonance fluorescence single photons Rabi oscillation

Received: 06 February 2017
Revised: 06 April 2017
Accepted manuscript online:

PACS:	42.50.Ct	(Quantum description of interaction of light and matter; related experiments)
	42.50.Pq	(Cavity quantum electrodynamics; micromasers)
	78.55.Cr	(III-V semiconductors)
	78.67.Hc	(Quantum dots)

Fund:

Project supported by the National Basic Research Program, China (Grant No. 2013CB922304), the National Key Research and Development Program of China (Grant No. 2016YFA0301202), and the National Natural Science Foundation of China (Grant Nos. 11474275, 61674135, and 91536101).

Corresponding Authors: Xiu-Ming Dou, Bao-Quan Sun
E-mail: xmdou04@semi.ac.cn;bqsun@semi.ac.cn

About author: 0.1088/1674-1056/26/8/

Cite this article:

Yong-Zhou Xue(薛永洲), Ze-Sheng Chen(陈泽升), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川), De-Sheng Jiang(江德生), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权) Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm 2017 Chin. Phys. B 26 084202

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Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

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