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Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition |
Xue-Li Ma(马雪丽)1,3, Hong Yang(杨红)1,3, Jin-Juan Xiang(项金娟)1,3, Xiao-Lei Wang(王晓磊)1,3, Wen-Wu Wang(王文武)1,3, Jian-Qi Zhang(张建齐)2, Hua-Xiang Yin(殷华湘)1,3, Hui-Long Zhu(朱慧珑)1,3, Chao Zhao(赵 超)1,3 |
1 Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 National Center for Nanoscience and Technology, Beijing 100190, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract In this work, ultrathin pure HfO2 and Al-doped HfO2 films (about 4-nm thick) are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO2 and Al-doped HfO2 films are both amorphous. After 550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO2 film while the Al-doped HfO2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.
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Received: 14 October 2016
Revised: 22 November 2016
Accepted manuscript online:
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PACS:
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77.55.D-
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81.40.-z
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(Treatment of materials and its effects on microstructure, nanostructure, And properties)
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82.60.Nh
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(Thermodynamics of nucleation)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016501) and the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163). |
Corresponding Authors:
Wen-Wu Wang
E-mail: wangwenwu@ime.ac.cn
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Cite this article:
Xue-Li Ma(马雪丽), Hong Yang(杨红), Jin-Juan Xiang(项金娟), Xiao-Lei Wang(王晓磊), Wen-Wu Wang(王文武), Jian-Qi Zhang(张建齐), Hua-Xiang Yin(殷华湘), Hui-Long Zhu(朱慧珑), Chao Zhao(赵 超) Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition 2017 Chin. Phys. B 26 027701
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