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High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier |
| Feng Xu(徐峰)1,2, Peng Chen(陈鹏)1,2, Fu-Long Jiang(蒋府龙)1, Ya-Yun Liu(刘亚云)1, Zi-Li Xie(谢自立)1, Xiang-Qian Xiu(修向前)1, Xue-Mei Hua(华雪梅)1, Yi Shi(施毅)1, Rong Zhang(张荣)1, You-Liao Zheng(郑有炓)1 |
1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China |
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Abstract A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence (PL) properties of the InGaN/AlInGaN MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs (76.1%) is much higher than that of InGaN/GaN MQWs (21%). The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.
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Received: 22 July 2016
Revised: 18 October 2016
Accepted manuscript online:
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PACS:
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78.55.Cr
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(III-V semiconductors)
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78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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78.67.De
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(Quantum wells)
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78.55.-m
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(Photoluminescence, properties and materials)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274003, 61422401, 51461135002, and 61334009), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BY2013077, BK20141320, BE2015111, and BK20161324), the Program for New Century Excellent Talents in University, China (Grant No. NCET-11-0229), and the Special Semiconductor Materials and Devices Research Funds from State Grid Shandong Electric Power Company, China. |
Corresponding Authors:
Peng Chen
E-mail: pchen@nju.edu.cn
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Cite this article:
Feng Xu(徐峰), Peng Chen(陈鹏), Fu-Long Jiang(蒋府龙), Ya-Yun Liu(刘亚云), Zi-Li Xie(谢自立), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Yi Shi(施毅), Rong Zhang(张荣), You-Liao Zheng(郑有炓) High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier 2017 Chin. Phys. B 26 017803
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