X-band inverse class-F GaN internally-matched power amplifier

doi:10.1088/1674-1056/25/9/097306

Abstract

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor C_ds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

Keywords: GaN internally-matched power amplifier inverse class-F compensation design X-band power amplifier

Received: 06 February 2016
Revised: 27 May 2016
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	84.60.Bk	(Performance characteristics of energy conversion systems; figure of merit)
	84.30.Le	(Amplifiers)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund:

Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

Corresponding Authors: Pei-jun Ma
E-mail: pjma@xidian.edu.cn

Cite this article:

Bo-Chao Zhao(赵博超), Yang Lu(卢阳), Wen-Zhe Han(韩文哲), Jia-Xin Zheng(郑佳欣), Heng-Shuang Zhang(张恒爽), Pei-jun Ma(马佩军), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) X-band inverse class-F GaN internally-matched power amplifier 2016 Chin. Phys. B 25 097306

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X-band inverse class-F GaN internally-matched power amplifier

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