Epitaxy of III-nitrides on two-dimensional materials and its applications

doi:10.1088/1674-1056/ac921f

Abstract III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of III-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality, low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices. In this progress report, the main methods for the preparation of 2D materials, and the recent progress and applications of different techniques for the growth of III-nitrides based on 2D materials are reviewed.

Keywords: nitrides two-dimensional materials van der Waals forces

Received: 15 April 2022
Revised: 11 September 2022
Accepted manuscript online: 15 September 2022

PACS:	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
	73.61.Ey	(III-V semiconductors)
	68.65.-k	(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61734008) and the National Natural Science Foundation of China (Grant No. 62174173). Thanks to Yipu Qu, Yuning Wang, Lu Li, Fan Yang, Jianjie Li, Jiahao Tao, Xin Cai, Jinbiao Huang, Jizong Zhou, Yunpeng Wu, and Meng Le for their preparing the manuscript.

Corresponding Authors: Jianfeng Wang, Ke Xu
E-mail: jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn

Cite this article:

Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科) Epitaxy of III-nitrides on two-dimensional materials and its applications 2022 Chin. Phys. B 31 117702

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