SPECIAL TOPIC—High pressure physics |
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Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors |
Bi-Juan Chen(陈碧娟)1, Zheng Deng(邓正)1, Xian-Cheng Wang(望贤成)1, Shao-Min Feng(冯少敏)1, Zhen Yuan(袁真)1, Si-Jia Zhang(张思佳)1, Qing-Qing Liu(刘清青)1, Chang-Qing Jin(靳常青)1,2 |
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China |
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Abstract The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.
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Received: 17 March 2016
Revised: 07 April 2016
Accepted manuscript online:
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PACS:
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75.50.Pp
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(Magnetic semiconductors)
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81.40.Vw
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(Pressure treatment)
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74.62.Fj
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(Effects of pressure)
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78.40.Fy
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(Semiconductors)
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Fund: Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China. |
Corresponding Authors:
Xian-Cheng Wang, Chang-Qing Jin
E-mail: Jin@iphy.ac.cn
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Cite this article:
Bi-Juan Chen(陈碧娟), Zheng Deng(邓正), Xian-Cheng Wang(望贤成), Shao-Min Feng(冯少敏), Zhen Yuan(袁真), Si-Jia Zhang(张思佳), Qing-Qing Liu(刘清青), Chang-Qing Jin(靳常青) Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors 2016 Chin. Phys. B 25 077503
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