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Irradiation effects of graphene and thin layer graphite induced by swift heavy ions |
Zeng Jian (曾健)a, Liu Jie (刘杰)a, Zhang Sheng-Xia (张胜霞)a b, Zhai Peng-Fei (翟鹏飞)a, Yao Hui-Jun (姚会军)a, Duan Jing-Lai (段敬来)a, Guo Hang (郭航)a b, Hou Ming-Dong (侯明东)a, Sun You-Mei (孙友梅)a |
a Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions (209Bi, 9.5 MeV/u) with the fluences in a range of 1011 ions/cm2–1012 ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the "blue shift" of 2D bond and the "red shift" of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φth is. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6×1012 ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak (HD/HD').
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Received: 19 January 2015
Revised: 08 April 2015
Accepted manuscript online:
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PACS:
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61.82.-d
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(Radiation effects on specific materials)
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61.72.Hh
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(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, 11005134, and 11275237). |
Corresponding Authors:
Liu Jie
E-mail: j.liu@impcas.ac.cn
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Cite this article:
Zeng Jian (曾健), Liu Jie (刘杰), Zhang Sheng-Xia (张胜霞), Zhai Peng-Fei (翟鹏飞), Yao Hui-Jun (姚会军), Duan Jing-Lai (段敬来), Guo Hang (郭航), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅) Irradiation effects of graphene and thin layer graphite induced by swift heavy ions 2015 Chin. Phys. B 24 086103
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