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Chin. Phys. B, 2015, Vol. 24(6): 068102    DOI: 10.1088/1674-1056/24/6/068102

Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

Tijjani Adama, U. HAshima, Th S. Dhahib
a Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia;
b Physics Department, College of Education for Pure Science, Basra University, Basra, Iraq

A functionalized silicon nanowire field-effect transistor (SiNW FET) was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method with the ability to provide specific and reliable data. The device was designed and fabricated by indented ash trimming via shallow anisotropic etching. The approach is a simple and low-cost technique that is compatible with the current commercial semiconductor standard CMOS process without an expensive deep reactive ion etcher. Specific electric changes were observed for DNA sensing when the nanowire surface was modified with a complementary captured DNA probe and target DNA through an organic linker (–OCH2CH3) using organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES). With this surface modification, a single specific target molecule can be detected. The simplicity of the sensing domain makes it feasible to miniaturize it for the development of a cancer detection kit, facilitating its use in both clinical and non-clinical environments to allow non-expert interpretation. With its novel electric response and potential for mass commercial fabrication, this biosensor can be developed to become a portable/point of care biosensor for both field and diagnostic applications.

Keywords:  silicon nanowire      biosensor      specific DNA detection      anisotropic etching      Si-ash-trimming      semiconductor      pH sensor  
Received:  17 July 2014      Revised:  30 November 2014      Accepted manuscript online: 
PACS:  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  81.07.Gf (Nanowires)  
  07.10.Cm (Micromechanical devices and systems)  
  62.23.St (Complex nanostructures, including patterned or assembled structures)  
Corresponding Authors:  Tijjani Adam, U. HAshim, Th S. Dhahi     E-mail:;;
About author:  81.07.-b; 81.07.Gf; 07.10.Cm; 62.23.St

Cite this article: 

Tijjani Adam, U. HAshim, Th S. Dhahi Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection 2015 Chin. Phys. B 24 068102

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