Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

doi:10.1088/1674-1056/ac6946

Abstract Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.

Keywords: tapered Bragg grating lateral beam semiconductor laser

Received: 28 February 2022
Revised: 17 April 2022
Accepted manuscript online: 22 April 2022

PACS:

42.55.Px

(Semiconductor lasers; laser diodes)

Fund: Project supported by the Science and Technology Development Plan of Jilin Province, China (Grant Nos. 20210201030GX and 20210201089GX).

Corresponding Authors: Li Xu, Jie Fan
E-mail: 361394566@qq.com;fanjie@cust.edu.cn

Cite this article:

Qi-Qi Wang(王琦琦), Li Xu(徐莉)^†, Jie Fan(范杰)^‡, Hai-Zhu Wang(王海珠), and Xiao-Hui Ma(马晓辉) Lateral characteristics improvements of DBR laser diode with tapered Bragg grating 2022 Chin. Phys. B 31 094204

[1] Zhu N H 2017 Chin. Opt. Lett. 01 6
[2] Beck M, Hofstetter D, Aellen T, Faist J, et al. 2002 Science 295 301
[3] Wen Y, Fan Z, Shang L H, Wu C T, et al. 2021 Chin. Phys. B 30 034206
[4] Papatryfonos, Konstantinos, Saladukha, Dzianis, et al. 2017 J. Appl. Phys. 125 103101
[5] Müller A, Zink C, Ginolas A, Fricke J, et al. 2017 IEEE High Power Diode Laser and System Conference, October 11-12, 2017, Coventry, England
[6] Sujecki S, Borruel L, Wykes, J, Moreno P, Sumpf B, et al. 2003 IEEE Journal of Selected Topics in Quantum Electronics 3 823
[7] Rong J M, Xing E B, Zhang Y, et al. 2016 Opt. Express 24 7246
[8] Miah M J, Strohmaier S, Urban G and Bimberg D 2018 Appl. Phys. Lett. 113 221107
[9] Wang L J, Tong C Z, Shu S L, et al. 2019 Opt. Lett. 44 3562
[10] Zuo J X and Lin X C 2022 Laser Photon. Rev. 2100741
[11] Xie W J, Li J Z, Liao M L, Sun S, et al. 2019 Micromachines 10 529
[12] Chen H, Jia P, Chen C, et al. 2019 Opt. Commun. 445 296
[13] E S Y, Zhou Y L, Zhang X, Wang L J, et al. 2020 Appl. Opt. 59 8789
[14] Xing Z Q, Zhou Y J, Liu Y H and Wang F 2020 Chin. Phys. B 29 027302
[15] Wang Y F, Niass M, Wang F and Liu Y H 2020 Chin. Phys. B 29 017301
[16] Patchell J, Jones D, Kelly B and Gorman J O 2005 Proc. SPIE- Int. Soc. Opt. Eng. 5825 1
[17] Koester J P, Putz A, Wenzel H, Wünsche H J and Knigge A 2020 Semicond. Sci. Technol. 36 015014
[18] Crump P, Leisher P, Matson T, Anderson V, et al. 2008 Appl. Phys. Lett. 92 131113

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Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

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