Special Issue:
TOPICAL REVIEW — III-nitride optoelectronic materials and devices
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TOPICAL REVIEW—III-nitride optoelectronic materials and devices |
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Status of GaN-based green light-emitting diodes |
Liu Jun-Lin (刘军林), Zhang Jian-Li (张建立), Wang Guang-Xu (王光绪), Mo Chun-Lan (莫春兰), Xu Long-Quan (徐龙权), Ding Jie (丁杰), Quan Zhi-Jue (全知觉), Wang Xiao-Lan (王小兰), Pan Shuan (潘拴), Zheng Chang-Da (郑畅达), Wu Xiao-Ming (吴小明), Fang Wen-Qing (方文卿), Jiang Feng-Yi (江风益) |
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China |
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Abstract GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.
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Received: 20 January 2015
Revised: 05 February 2015
Accepted manuscript online:
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PACS:
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78.66.Fd
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(III-V semiconductors)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334001), the National Natural Science Foundation of China (Grant Nos. 11364034 and 21405076), the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAE32B01), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101). |
Corresponding Authors:
Zhang Jian-Li
E-mail: Zhangjianli@ncu.edu.cn
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About author: 78.66.Fd; 73.40.Kp |
Cite this article:
Liu Jun-Lin (刘军林), Zhang Jian-Li (张建立), Wang Guang-Xu (王光绪), Mo Chun-Lan (莫春兰), Xu Long-Quan (徐龙权), Ding Jie (丁杰), Quan Zhi-Jue (全知觉), Wang Xiao-Lan (王小兰), Pan Shuan (潘拴), Zheng Chang-Da (郑畅达), Wu Xiao-Ming (吴小明), Fang Wen-Qing (方文卿), Jiang Feng-Yi (江风益) Status of GaN-based green light-emitting diodes 2015 Chin. Phys. B 24 067804
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