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Chin. Phys. B, 2015, Vol. 24(3): 038502    DOI: 10.1088/1674-1056/24/3/038502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

High performance silicon waveguide germanium photodetector

Li Chong (李冲)a b, Xue Chun-Lai (薛春来)a, Li Ya-Ming (李亚明)a, Li Chuan-Bo (李传波)a, Cheng Bu-Wen (成步文)a, Wang Qi-Ming (王启明)a
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Abstract  

High-performance Ge-on-SOI p-i-n waveguide photodetectors with different sizes were fabricated. The performances, in terms of dark-current, photo current responsivity and 3-dB bandwidth, were well studied. A responsivity of 0.842 A/W at 1550 nm and dark current of 70 nA was measured from this detector at -1 V. The detector with a size of 4 μm× 10 μm demonstrated an optical band width of 19 GHz at -5 V for 1550 nm. Both the experimental results and the finite-difference time domain simulation show that, when the device size is above a certain threshold, the absorption is not sensitively dependent on such designing parameters as the width and length of the photodetector.

Keywords:  waveguide      optical telecommunication      germanium  
Received:  28 April 2014      Revised:  28 September 2014      Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Corresponding Authors:  Li Chong     E-mail:  chli@semi.ac.cn

Cite this article: 

Li Chong (李冲), Xue Chun-Lai (薛春来), Li Ya-Ming (李亚明), Li Chuan-Bo (李传波), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) High performance silicon waveguide germanium photodetector 2015 Chin. Phys. B 24 038502

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