Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

doi:10.1088/1674-1056/24/3/037304

Abstract

We present an AlGaN/GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and low-density drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F^-) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.

Keywords: GaN high-electron mobility transistors fluorine electric field

Received: 19 June 2014
Revised: 16 September 2014
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)
	52.77.Dq	(Plasma-based ion implantation and deposition)

Fund:

Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334002) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61404100 and 61106106).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

Cite this article:

Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors 2015 Chin. Phys. B 24 037304

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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

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