Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt
Tang Xin-Yue (唐欣月)a, Gao Hong (高红)a, Wu Li-Li (武立立)b, Wen Jing (温静)a, Pan Si-Ming (潘思明)a, Liu Xin (刘欣)a, Zhang Xi-Tian (张喜田)a
a Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China; b Center for Engineering Training and Basic Experimentation, Heilongjiang University of Science and Technology, Harbin 150022, China
Abstract One-dimensional (1D) In2O3(ZnO)m superlattice nanobelts are synthesized by a chemical vapor deposition method. The formation of the In2O3(ZnO)m superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm-1 is found in the Raman spectrum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In2O3(ZnO)m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in the photocurrent property between them, and their transport mechanisms are also discussed.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172058), the Key Project of the Science Technology and Research Project of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Natural Science Foundation of Heilongjiang Province for Returned Chinese Scholars, China (Grant No. LC2013C17).
Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
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