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Chin. Phys. B, 2014, Vol. 23(7): 077202    DOI: 10.1088/1674-1056/23/7/077202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires

Zhu Zong-Peng (朱宗鹏)a b, Wei Bin (魏斌)b, Zhang Jian-Hua (张建华)b, Wang Jun (王军)b
a School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
b Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China
Abstract  Ultralong titanyl phthalocyanine (TiOPc) sub-micron wires have been synthesized by a novel solution-based self-assembly method. By using different solvents, changing the mass concentration and the solvent vapor pressure, the length and the shape of the wires can be adjusted. The mixed-phase properties of the TiOPc sub-micron wires were investigated by the ultraviolet-visible (UV-vis) absorption spectrum and X-ray diffraction. Organic transistors based on these wires were studied, which show the typical p-channel characteristics.
Keywords:  titanyl phthalocyanine      sub-micron wire      transistor      solution method  
Received:  21 September 2013      Revised:  08 December 2013      Accepted manuscript online: 
PACS:  72.80.Le (Polymers; organic compounds (including organic semiconductors))  
  81.16.Dn (Self-assembly)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176021) and the Innovation Group Project from Shanghai Education Commission, China.
Corresponding Authors:  Wang Jun     E-mail:  wangj@shu.edu.cn
About author:  72.80.Le; 81.16.Dn; 73.40.Qv

Cite this article: 

Zhu Zong-Peng (朱宗鹏), Wei Bin (魏斌), Zhang Jian-Hua (张建华), Wang Jun (王军) A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires 2014 Chin. Phys. B 23 077202

[1] Briseno A L, Mannsfeld S C B, Reese C, Hancock J M, Xiong Y, Jenekhe S A, Bao Z N and Xia Y N 2007 Nano Lett. 7 2847
[2] Tang Q X, Li H X, He M, Hu W P, Liu C M, Chen K Q, Wang C, Liu Y Q and Zhu D B 2006 Adv. Mater. 18 65
[3] Li J, Zhang Y L, To S, You L D and Sun Y 2011 ACS Nano 5 6661
[4] Yu H Z and Peng J B 2008 Chin. Phys. Lett. 25 1411
[5] Zhao Y S, Fu H, Peng A D and Yao J 2007 Adv. Mater. 19 3554
[6] Zhang J F and Wu F M 1999 Chin. Phys. 8 326
[7] Briseno A L, Mannsfeld S C B, Lu X M, Xiong Y J, Jenekhe S A, Bao Z N and Xia Y N 2007 Nano Lett. 7 668
[8] Shen C M, Yang T Z and Xiao C W 2008 Chin. Phys. B 17 2191
[9] Bradley K, Gabriel J C P and Gruner G 2003 Nano Lett. 3 1353
[10] Jiang Y H, Liu L W, Yang K, Xiao W D and Gao H J 2011 Chin. Phys. B 20 096401
[11] Payne M M, Parkin S R, Anthony J E, Kuo C C and Jackson T N 2005 J. Am. Chem. Soc. 127 4986
[12] Che Y K, Datar A, Balakrishnan K and Zang L 2007 J. Am. Chem. Soc. 129 7234
[13] Sheraw C D, Jackson T N, Eaton D L and Anthony J E 2003 Adv. Mater. 15 2009
[14] O'Flaherty S M, Hold S V, Cook M J, Torres T, Chen Y, Hanack M and Blau W J 2003 Adv. Mater. 15 19
[15] Li L Q, Tang Q X, Li H X, Yang X D, Hu W P, Song Y B, Shuai Z G, Xu W, Liu Y Q and Zhu D B 2007 Adv. Mater. 19 2613
[16] Conboy J C, Olson E J C, Adams D M, Kerimo J, Zaban A, Gregg B A and Barbara P F 1998 J. Phys. Chem. B 102 4516
[17] Brinkmann M, Wittmann J C, Barthel M, Hanack M and Chaumont C 2002 Chem. Mater. 14 904
[18] Ji Z Y, Liu M, Shang L W, Hu W P, Liu G, Liu X H and Wang H 2009 J. Mater. Chem. 5507
[19] Grzelczak M, Vermant J, Furst E M and Liz-Marzan L M 2010 ACS Nano 4 3591
[20] Lever A B P 1965 Advances in Inorganic Chemistry and Radiochmistry (New York: Academic) p. 27
[21] Mizuguchi J, Rihs G and Karfunkel H R 1995 J. Phys. Chem. 99 16217
[22] Simon J and Andre J J 1985 Molecular Semiconductors (Berlin: Academic)
[23] Saito T, Sisk W, Kobayashi T, Suzuki S and Iwayanagi T 1993 J. Phys. Chem. 97 8026
[24] Yamashita A, Maruno T and Hayashi T 1994 J. Phys. Chem. 98 12695
[25] Liu C J, Wang S Y, Hsieh J C and Ju Y H 2000 Sensor. Actuat. B 65 371
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