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Spin transport in epitaxial Fe3O4/GaAs lateral structured devices |
| Zhaocong Huang(黄兆聪)1,2, Wenqing Liu(刘文卿)3,4, Jian Liang(梁健)1, Qingjie Guo(郭庆杰)1, Ya Zhai(翟亚)1,†, and Yongbing Xu(徐永兵)2,3,‡ |
1 School of Physics, Southeast University, Nanjing 211189, China;
2 Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO105 DD, United Kingdom;
3 York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
4 Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW200 EX, United Kingdom |
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Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.
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Received: 08 November 2021
Revised: 04 January 2022
Accepted manuscript online: 05 January 2022
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PACS:
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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85.75.Hh
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(Spin polarized field effect transistors)
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73.43.Qt
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(Magnetoresistance)
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75.30.Gw
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(Magnetic anisotropy)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204800), and the National Natural Science Foundation of China (Grant Nos. 52071079 and 11504047). |
Corresponding Authors:
Ya Zhai, Yongbing Xu
E-mail: yazhai@seu.edu.cn;ybxu@nju.edu.cn
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Cite this article:
Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵) Spin transport in epitaxial Fe3O4/GaAs lateral structured devices 2022 Chin. Phys. B 31 068505
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