Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition

doi:10.1088/1674-1056/23/6/067103

Abstract We report on an improvement in the crystal quality of GaN film with an In_0.17Al_0.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.

Keywords: In_0.17Al_0.83N interlayer GaN crystal quality dislocation reduction photoluminescence Raman spectra

Received: 11 September 2013
Revised: 03 November 2013
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076079, 61274092, and 61204006) and the Key Program of the National Natural Science Foundation of China (Grant No. 61334002).

Corresponding Authors: Yang Lin-An
E-mail: layang@xidian.edu.cn

Cite this article:

Li Liang (李亮), Yang Lin-An (杨林安), Xue Jun-Shuai (薛军帅), Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Improved crystal quality of GaN film with the in-plane lattice-matched In_0.17Al_0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition 2014 Chin. Phys. B 23 067103

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Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition

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Improved crystal quality of GaN film with the in-plane lattice-matched In_0.17Al_0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition