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Chin. Phys. B, 2014, Vol. 23(3): 038403    DOI: 10.1088/1674-1056/23/3/038403
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美)
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
Abstract  High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3×10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.
Keywords:  AlGaN/GaN HEMTs      low-leakage current      metal organic chemical vapor deposition      Mg-doped buffer layer  
Received:  23 August 2013      Revised:  17 September 2013      Accepted manuscript online: 
PACS:  84.30.Jc (Power electronics; power supply circuits)  
  85.30.-z (Semiconductor devices)  
  85.30.Tv (Field effect devices)  
Corresponding Authors:  Li Ming     E-mail:  eeliming@sina.com

Cite this article: 

Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition 2014 Chin. Phys. B 23 038403

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