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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition |
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) |
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China |
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Abstract High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3×10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.
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Received: 23 August 2013
Revised: 17 September 2013
Accepted manuscript online:
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PACS:
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84.30.Jc
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(Power electronics; power supply circuits)
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85.30.-z
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(Semiconductor devices)
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85.30.Tv
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(Field effect devices)
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Corresponding Authors:
Li Ming
E-mail: eeliming@sina.com
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Cite this article:
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition 2014 Chin. Phys. B 23 038403
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