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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition |
Zesheng Ji(吉泽生)1, Lianshan Wang(汪连山)1,2, Guijuan Zhao(赵桂娟)1, Yulin Meng(孟钰淋)1, Fangzheng Li(李方政)1, Huijie Li(李辉杰)1, Shaoyan Yang(杨少延)1, Zhanguo Wang(王占国)1 |
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract We report the growth of AlN epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The sources of trimethylaluminium (TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of AlN epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction (HRXRD) measurement showed that the full width at half maximum (FWHM) of the (0002) and (10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square (RMS) roughness was lower to 0.2 nm as tested by atomic force microscope (AFM). The growth process of AlN epilayers was discussed in terms of crystalline quality, surface morphology, and residual stress.
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Received: 26 January 2017
Revised: 17 March 2017
Accepted manuscript online:
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PACS:
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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Fund: Project supported by the National High Technology Research and Development Program of China (Grant No.2015AA016801) and Guangdong Provincial Scientific and Technologic Planning Program,China (Grant No.2014B010119002). |
Corresponding Authors:
Lianshan Wang
E-mail: ls-wang@semi.ac.cn
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Cite this article:
Zesheng Ji(吉泽生), Lianshan Wang(汪连山), Guijuan Zhao(赵桂娟), Yulin Meng(孟钰淋), Fangzheng Li(李方政), Huijie Li(李辉杰), Shaoyan Yang(杨少延), Zhanguo Wang(王占国) Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 2017 Chin. Phys. B 26 078102
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[1] |
Collazo R, Mita S, J Xie, Rice A, Tweedie J, Dalmau R and Sitar Z 2011 Physica Status Solidi 8 2031
|
[2] |
J Xie, Mita S, Bryan Z, W Guo, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M and Collazo R 2013 Appl. Phys. Lett. 102 171102
|
[3] |
Taniyasu Y, Kasu M and Makimoto T 2006 Nature 441 325
|
[4] |
C Ren, S Zhong, Y Li, Z Li, Y Kong and T Chen 2016 Journal of Semiconductors 37 084002
|
[5] |
X Sun, D Li, Y Chen, H Song, H Jiang, Z Li, G Miao and Z Zhang 2013 Crystengcomm 15 6066
|
[6] |
Creighton J R, Wang G T, Breiland W G and Coltrin M E 2004 Journal of Crystal Growth 261 204
|
[7] |
Suda J, Noriojima, Kimoto T and Matsunami H 2003 MRS Online Proceeding Library 798
|
[8] |
B Daudin, G Feuillet, G Mula, H Mariette, J L Rouviére and N Pelekanos 1999 Physica Status Solidi 176 621
|
[9] |
Dauelsberg M, Brien D, Rauf H, Reiher F, Baumgartl J, Hberlen O, Segal A S, Lobanova A V, Yakovlev E V and Talalaev R A 2014 Journal of Crystal Growth 393 103
|
[10] |
Hsu K Y, Chung H C, Liu C P and Tu L W 2007 Appl. Phys. Lett. 90 211902
|
[11] |
Sun X, Li D, Chen Y, Song H, Jiang H, Li Z, Miao G and Zhang Z 2013 CrystEngComm 15 6066
|
[12] |
Takano K, Saito Y and Pierre-Louis O 2010 Phys. Rev. B 82 2195
|
[13] |
Mihopoulos T G, Gupta V and Jensen K F 1998 Journal of Crystal Growth 195 733
|
[14] |
Breiland W G and Killeen K P 1995 J. Appl. Phys. 78 6726
|
[15] |
Gherasoiu I, Nikishin S, Kipshidze G, Borisov B, Chadolu A, Ramkumar C, Holtz M and Temkin H 2004 J. Appl. Phys. 96 6272
|
[16] |
Huang W C, Chu C M, Wong Y Y, Chen K W, Lin Y K, Wu C H, Lee W I and Chang E Y 2016 Mater. Sci. Semicond. Process 45 1
|
[17] |
Heinke H, Kirchner V, Einfeldt S and Hommel D 2000 Appl. Phys. Lett. 77 2145
|
[18] |
Dumn C G and Koch E F 1957 Acta Metall 5 548
|
[19] |
Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P and Evarestov R A 1998 Phys. Rev. B 58 12899
|
[20] |
Sarua A, Kuball M and Van J E 2002 Appl. Phys. Lett. 81 1426
|
[21] |
Trodahl H J, Martin F, Muralt P and Setter N 2006 Appl. Phys. Lett. 89 3498
|
[22] |
Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R and Sitar Z 2016 Journal of Crystal Growth 438 81
|
[23] |
Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J P, Collazo R and Sitar Z 2016 Journal of Crystal Growth 451 65
|
[24] |
Wang T Y, Liang J H, Fu G W and Wuu D S 2016 CrystEngComm 18 9152
|
[25] |
Tersoff J, Phang Y H, Zhang Z and Lagally M G 1995 Phys. Rev. Lett. 75 2730
|
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