Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

doi:10.1088/1674-1056/25/1/018102

Abstract

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 10¹³ cm^-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm²/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

Keywords: heterostructure InGaN channel pulsed metal organic chemical vapor deposition

Received: 16 June 2015
Revised: 22 August 2015
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Corresponding Authors: Jin-Cheng Zhang
E-mail: jchzhang@xidian.edu.cn

Cite this article:

Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition 2016 Chin. Phys. B 25 018102

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Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

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