In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

doi:10.1088/1674-1056/24/9/096103

Abstract

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3× 2" Thomas Swan close coupled showerhead metal organic chemical vapor deposition (MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses (tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, GaN grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded AlGaN buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Keywords: stresses metal organic chemical vapor deposition wafer bowing in-situ reflectivity mapping

Received: 16 December 2014
Revised: 23 April 2015
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	83.60.Hc	(Normal stress differences and their effects (e.g. rod climbing))
	61.72.Ff	(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant No. 2011CB301903), the Ph.D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2014KF17).

Corresponding Authors: Liu Yang
E-mail: liuy69@mail.sysu.edu.cn;zhbaij@mail.sysu.edu.cn

Cite this article:

Yang Yi-Bin (杨亿斌), Liu Ming-Gang (柳铭岗), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Chen Jie (陈杰), Lin Xiu-Qi (林秀其), Lin Jia-Li (林佳利), Luo Hui (罗慧), Liao Qiang (廖强), Zang Wen-Jie (臧文杰), Chen Yin-Song (陈崟松), Qiu Yun-Ling (邱运灵), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system 2015 Chin. Phys. B 24 096103

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In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

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