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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses |
Ma Xiao-Hua(马晓华)a)b), Jiao Ying(焦颖) a), Ma Ping(马平)a), He Qiang(贺强)a), Ma Ji-Gang(马骥刚)a) , Zhang Kai(张凯)b), Zhang Hui-Long(张会龙)a), Zhang Jin-Cheng(张进成) b), and Hao Yue(郝跃)b) |
a School of Technical Physics, Xidian University, Xi'an 710071, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, VDS =0 state, and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415). However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.
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Received: 26 May 2011
Revised: 20 July 2011
Accepted manuscript online:
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PACS:
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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78.30.Fs
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(III-V and II-VI semiconductors)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities (Grant No. K50510250006). |
Cite this article:
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses 2011 Chin. Phys. B 20 127305
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[1] |
Joh J and del Alamo J A 2006 IEEE IEDM Tech. Digest December 11-13, 2006, San Francisco, USA p. 415
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[2] |
Meneghesso G, Verzellesi G, Danesin F, Rampazzo F, Zanon F, Tazzoli A, Meneghini M and Zanoni E 2008 IEEE Trans. Device and Material Reliability 8 332
|
[3] |
Ma X H, Pan C Y, Yang L Y, Yu H Y, Yang L, Quan S, Wang H, Zhang J C and Hao Y 2011 Chin. Phys. B 20 027304
|
[4] |
Ma X H, Ma J G, Yang L Y, He Q, Jiao Y, Ma P and Hao Y 2011 Chin. Phys. B 20 067304
|
[5] |
Rongming C, Likun S, Fichtenbaum N, Brown D, Zhen C, Keller S, DenBaars S P and Mishra U K 2008 IEEE Electron. Dev. Lett. 29 974
|
[6] |
Sozza A, Dua C, Morvan E, Delage S, Rampazzo F, Tazzoli A, Danesin F, Meneghesso G, Zanoni E, Gurutchet A, Malbert N, Labat N, Grimbert B and de Jaeger J C 2005 IEEE IEDM Tech. Digest December 5-7, 2005, San Francisco, USA p. 590
|
[7] |
Kim H, Thompson R M, Tilak V, Prunty T R, Shealy J R and Eastman L F 2003 Electron. Dev. Lett. 24 421
|
[8] |
Kunii T, Totsuka M, Kamo Y, Yamamoto Y, Takeuchi H, Shimada Y, Shiga T, Minami H, Kitano T, Miyakuni S, Nakatsuka S, Inoue A, Oku T, Nanjo T, Oishi T, Ishikawa T and Matsuda Y 2004 IEEE CSIC Digest December 13-15, 2004 San Francisco, USA p. 197
|
[9] |
Joh J, Xia L and del Alamo J A 2007 IEEE IEDM Tech. Digest December 10-12, 2007, Washington DC, USA p. 385
|
[10] |
Joh J and del Alamo J A 2008 IEEE Electron. Dev. Lett. 29 287
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