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Chin. Phys. B, 2011, Vol. 20(12): 127305    DOI: 10.1088/1674-1056/20/12/127305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

Ma Xiao-Hua(马晓华)a)b), Jiao Ying(焦颖) a), Ma Ping(马平)a), He Qiang(贺强)a), Ma Ji-Gang(马骥刚)a) , Zhang Kai(张凯)b), Zhang Hui-Long(张会龙)a), Zhang Jin-Cheng(张进成) b), and Hao Yue(郝跃)b)
a School of Technical Physics, Xidian University, Xi'an 710071, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, VDS =0 state, and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415). However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.
Keywords:  inverse piezoelectric effects      degradation mechanisms      hot electron effects      DC electrical step stresses      AlGaN/GaN HEMTs      reliability  
Received:  26 May 2011      Revised:  20 July 2011      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.61.Ey (III-V semiconductors)  
  78.30.Fs (III-V and II-VI semiconductors)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities (Grant No. K50510250006).

Cite this article: 

Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses 2011 Chin. Phys. B 20 127305

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