Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

doi:10.1088/1674-1056/23/3/037302

Abstract The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al_0.4Ga_0.6N/Al_0.18Ga_0.82N heterojunction with a state-of-the-art mobility of 815 cm²/(V·s) and a sheet resistance of 890 Ω/ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance–voltage (C–V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

Keywords: AlGaN channel heterojunction mobility electrical properties

Received: 12 August 2013
Revised: 24 September 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.-c	(Electronic transport in interface structures)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant Nos. 2011ZX01002-002 and 2013ZX02308-002), the Fundamental Research Funds for the Central Universities of Ministry of Education of China, and the National Natural Science Foundation of China (Grant Nos. 61204006 and 61106063).

Corresponding Authors: Zhang Jin-Cheng
E-mail: jchzhang@xidian.edu.cn

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Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃) Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer 2014 Chin. Phys. B 23 037302

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Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

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