Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures

doi:10.1088/1674-1056/23/3/037303

Abstract By using temperature-dependent current–voltage, variable-frequency capacitance–voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched In_0.18Al_0.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magnitude is observed after the thermal oxidation of the In_0.18Al_0.82N/GaN heterostructures at 700 ℃. It is confirmed that the reverse leakage current is dominated by the Frenkel–Poole emission, and the main origin of the leakage current is the emission of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the In_xAl_1-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the In_xAl_1-xN surface, which increases the electron emission barrier height.

Keywords: leakage current thermal oxidation Frenkel–Poole emission

Received: 09 May 2013
Revised: 29 July 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60444007, 11174008, 60325413, and 10774001).

Corresponding Authors: Lin Fang
E-mail: linfang@pku.edu.cn

Cite this article:

Lin Fang (林芳), Shen Bo (沈波), Lu Li-Wu (卢励吾), Xu Fu-Jun (许福军), Liu Xin-Yu (刘新宇), Wei Ke (魏珂) Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_0.18Al_0.82N/GaN heterostructures 2014 Chin. Phys. B 23 037303

[1]	Gonschorek M, Carlin J F, Feltin E, Py M A and Grandjean N 2006 Appl. Phys. Lett. 89 062106
[2]	Gadanecz A, Bläsing J, Dadgar A, Hums C and Krost A 2007 Appl. Phys. Lett. 90 221906
[3]	Kuzmík J, Kostopoulos A, Konstantinidis G, Carlin J F, Georgakilas A and Pogany D 2006 IEEE Trans. Electron Devices 53 422
[4]	Arslan E, Bütün S and Ozbay E 2009 Appl. Phys. Lett. 94 142106
[5]	Chikhaoui W, Bluet J M, Poisson M A, Sarazin N, Dua C and Bru-Chevallier C 2010 Appl. Phys. Lett. 96 072107
[6]	Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703
[7]	Huang S, Shen B, Wang M J, Xu F J, Wang Y, Yang H Y, Lin F, Lu L, Chen Z P, Qin Z X, Yang Z J and Zhang G Y 2007 Appl. Phys. Lett. 91 072109
[8]	Levinshtein M, Rumyantsev S L and Shur M 2001 Properties of Advanced Semiconductor Materials (New York: Wiley) p. 2001
[9]	Lin Y J, Lin W X, Lee C T and Chang H C 2006 Jpn. J. Appl. Phys. 45 2505
[10]	Beena D, Lethy K J, Vinodkumar R, Mahadevan P V P, Ganesan V, Phase D M and Sudheer S K 2009 Appl. Surf. Sci. 255 8334
[11]	Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H and Tao X M 2006 Appl. Phys. Lett. 89 143505
[12]	Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J and Redwing J M 2000 J. Appl. Phys. 87 8070
[13]	Özdemir A F, Türüt A and Köçe A 2003 Thin Solid Films 425 210
[14]	Wang Y S, Zheng Y D and Zhang R 1990 Journal of Nanjing University (Natural Sciences Edition) 26 211
[15]	Soh C B, Chua S J, Lim H F, Chi D Z, Tripathy S and Liu W 2004 J. Appl. Phys. 96 1341

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Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures

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Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_0.18Al_0.82N/GaN heterostructures