Field-effect transistors based on two-dimensional materials for logic applications

doi:10.1088/1674-1056/22/9/098505

Abstract Field-effect transistors (FETs) for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS₂, are discussed. These materials have drastically different properties and require different considerations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS₂ is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.

Keywords: graphene MoS₂ two-dimensional (2D) materials field-effect transistors

Received: 27 July 2013
Accepted manuscript online:

PACS:

87.75.Hh

Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Natural Science Foundation of China (Grant Nos. 61261160499 and 11274154), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02707), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012302), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120091110028).

Corresponding Authors: Wang Xin-Ran
E-mail: xrwang@nju.edu.cn

Cite this article:

Wang Xin-Ran (王欣然), Shi Yi (施毅), Zhang Rong (张荣) Field-effect transistors based on two-dimensional materials for logic applications 2013 Chin. Phys. B 22 098505

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