| CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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In situ electrical resistance and activation energy of solid C60 under high pressure |
| Yang Jie (杨洁)a b, Liu Cai-Long (刘才龙)b c, Gao Chun-Xiao (高春晓)b |
a Fundamental Department, Aviation University of Airforce, Changchun 130022, China;
b State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China;
c College of Geoexploration Science and Technology, Jilin University, Changchun 130026, China |
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Abstract The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0.49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.
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Received: 16 February 2013
Revised: 13 May 2013
Accepted manuscript online:
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PACS:
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62.50.-p
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(High-pressure effects in solids and liquids)
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71.55.-i
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(Impurity and defect levels)
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71.20.Tx
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(Fullerenes and related materials; intercalation compounds)
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| Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB808204), the National Natural Science Foundation of China (Grant Nos. 11074094 and 91014004), and the Fundamental Research Funds for Jilin University, China (Grant No. 450060491500). |
Corresponding Authors:
Liu Cai-Long
E-mail: cailong_liu@jlu.edu.cn
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Cite this article:
Yang Jie (杨洁), Liu Cai-Long (刘才龙), Gao Chun-Xiao (高春晓) In situ electrical resistance and activation energy of solid C60 under high pressure 2013 Chin. Phys. B 22 096202
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