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Chin. Phys. B, 2013, Vol. 22(7): 077309    DOI: 10.1088/1674-1056/22/7/077309
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  In this paper, a novel dual-gate & dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure which features the double extended trench gate and dielectric-inserted in the drift region is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance Ron,sp of 187 mΩ·mm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.
Keywords:  lateral trench insulated gate bipolar transistor      specific on-resistance      positive temperature coefficient      turnoff characteristic  
Received:  18 January 2013      Revised:  27 February 2013      Accepted manuscript online: 
PACS:  73.40.Ty (Semiconductor-insulator-semiconductor structures)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Pq (Bipolar transistors)  
Fund: Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 2009ZX02305-006) and the National Natural Science Foundation of China (Grant No. 61076082).
Corresponding Authors:  Fu Qiang     E-mail:  fuqiang17@gmail.com

Cite this article: 

Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate 2013 Chin. Phys. B 22 077309

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