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Chin. Phys. B, 2017, Vol. 26(4): 047306    DOI: 10.1088/1674-1056/26/4/047306

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

Wei Mao(毛维)1, Hai-Yong Wang(王海永)1, Xiao-Fei Wang(王晓飞)2, Ming Du(杜鸣)1, Jin-Feng Zhang(张金风)1, Xue-Feng Zheng(郑雪峰)1, Chong Wang(王冲)1, Xiao-Hua Ma(马晓华)1, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Xian Aerosemi Technology Co., LTD, Xi'an 710077, China
Abstract  To enhance the reverse blocking capability with low specific on-resistance, a novel vertical metal-oxide-semiconductor field-effect transistor (MOSFET) with a Schottky-drian (SD) and SD-connected semisuperjunctions (SD-D-semi-SJ), named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional (2D) numerical simulations. The SD contacted with the n-pillar exhibits the Schottky-contact property, and that with the p-pillar the Ohmic-contact property. Based on these features, the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions (SJ) or semisuperjunctions (semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage (BV) and the specific on-resistance (RonA). For a given pillar width and n-drift thickness, there exists a proper range of n-drift concentration (N), in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of RonA-BV compared to the predication of SJ MOSFET in the forward applications. And what is much valuable, in this proper range of N, the desired BV and good trade-off could be achieved only by determining the pillar thickness, with the top assist layer thickness unchanged. Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of RonA-BV improvement in SD-D-semi-SJ MOSFET. These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.
Keywords:  vertical MOSFET      Schottky-drain-connected semisuperjunction (SD-D-semi-SJ)      reverse blocking      specific on-resistance  
Received:  14 December 2016      Revised:  03 February 2017      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 605119425012).
Corresponding Authors:  Xiao-Fei Wang     E-mail:

Cite this article: 

Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions 2017 Chin. Phys. B 26 047306

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