Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate

doi:10.1088/1674-1056/22/7/077306

Abstract In_0.4Ga_0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without Si-doped In_0.49Ga_0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In_0.4Ga_0.6As MOSFETs without In_0.49Ga_0.51P barrier layer, In_0.4Ga_0.6As MOSFETs with In_0.49Ga_0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In_0.4Ga_0.6As MOSFETs (gate length 2 μm) with In_0.49Ga_0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm²/(V·s).

Keywords: metal-oxide-semiconductor field-effect transistor InGaAs InGaP Al₂O₃

Received: 18 December 2012
Revised: 05 February 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	71.55.Eq	(III-V semiconductors)
	77.55.D-

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2010CB327501), the National Natural Science Foundation of China (Grant No. 61106095), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

Corresponding Authors: Liu Hong-Gang
E-mail: liuhonggang@ime.ac.cn

Cite this article:

Chang Hu-Dong (常虎东), Sun Bing (孙兵), Xue Bai-Qing (薛百清), Liu Gui-Ming (刘桂明), Zhao Wei (赵威), Wang Sheng-Kai (王盛凯), Liu Hong-Gang (刘洪刚) Effect of Si-doped In_0.49Ga_0.51P barrier layer on the device performance of In_0.4Ga_0.6As MOSFETs grown onsemi-insulating GaAs substrate 2013 Chin. Phys. B 22 077306

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Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate

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Effect of Si-doped In_0.49Ga_0.51P barrier layer on the device performance of In_0.4Ga_0.6As MOSFETs grown onsemi-insulating GaAs substrate