Ultraviolet emissions realized in ZnO via avalanche multiplication process

doi:10.1088/1674-1056/22/7/077307

Abstract Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer, thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The results reported in this paper demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, thus may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issues of ZnO.

Keywords: avalanche multiplication wide bandgap semiconductor light-emitting devices

Received: 26 February 2013
Revised: 30 March 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.60.Jb	(Light-emitting devices)
	73.61.Ga	(II-VI semiconductors)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB302005), the National Natural Science Foundation of China (Grant Nos. 11074248, 11104265, 11134009, and 61177040), and the Science and Technology Developing Project of Jilin Province, China (Grant No. 20111801).

Corresponding Authors: Shan Chong-Xin
E-mail: shancx@ciomp.ac.cn

Cite this article:

Yu Ji (于吉), Shan Chong-Xin (单崇新), Shen He (申赫), Zhang Xiang-Wei (张祥伟), Wang Shuang-Peng (王双鹏), Shen De-Zhen (申德振) Ultraviolet emissions realized in ZnO via avalanche multiplication process 2013 Chin. Phys. B 22 077307

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Ultraviolet emissions realized in ZnO via avalanche multiplication process

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