Contact effect in the dynamic electron transport of two-probe mesoscopic conductor

doi:10.1088/1674-1056/22/7/077304

Abstract Based on the self-consistent electron dynamic transport theory for multi-probe mesoscopic systems, we calculate the distribution of internal potential, charge density, and ac conductance of a two-probe mesoscopic conductor with wide trapezoid reservoirs, and study the contact effect. The results show that including the contact effect can make a significant difference to the frequency-dependent electron transport properties. In the nonzero frequency case, the internal potential and the charge density are complex with extremely small imaginary parts. Importantly, the imaginary part of the charge density gives rise to a real ac conductance (admittance), which corresponds to the charge-relaxation resistance.

Keywords: mesoscopic system electron transport conductance charge density

Received: 16 January 2013
Revised: 22 February 2013
Accepted manuscript online:

PACS:	73.23.-b	(Electronic transport in mesoscopic systems)
	73.40.-c	(Electronic transport in interface structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11147152), the Natural Science Foundation of Guangdong Province, China (Grant No. S2011040002130), and the Youth Program of Zhanjiang Normal University, China (Grant No. L0702).

Corresponding Authors: Tian Ying
E-mail: rgquan0224@gmail.com

Cite this article:

Quan Jun (全军), Xiao Shi-Fa (肖世发), Tian Ying (田英) Contact effect in the dynamic electron transport of two-probe mesoscopic conductor 2013 Chin. Phys. B 22 077304

[1]	Büttiker M, Pretre A and Thomas H 1993 Phys. Rev. Lett. 70 4114
[2]	Quan J, Tian Y, Zhang J and Shao L X 2011 Chin. Phys. B 20 077201
[3]	Büttiker M 1993 J. Phys: Condens. Matter 5 9361
[4]	Wang C and Zhang Y H 2006 Chin. Phys. 15 2120
[5]	Christen T and Büttiker M 1996 Phys. Rev. Lett. 77 143
[6]	Pretre A, Thomas H and Büttiker M 1996 Phys. Rev. B 54 8130
[7]	Büttiker M, Thomas H and Pretre A 1994 Physica B: Condens. Matter 94 133
[8]	Zhao X A and Chen Y X 2001 Phys. Rev. B 64 085326
[9]	Gasparian V, Christen T and Büttiker M 1996 Phys. Rev. A. 54 4022
[10]	Ng T K 1996 Phys. Rev. Lett. 76 487
[11]	Jauho A and Meir Y 1993 Phys. Rev. B 48 487
[12]	Sanchez D and Büttiker M 2004 Phys. Rev. Lett. 93 106802
[13]	Spivak B and Zyuzin A 2004 Phys. Rev. Lett. 93 226801
[14]	Leturcq R, Sanchez D, Gotz G., Ihn T, Ensslin K, Driscoll D C and Gossard A C 2006 Phys. Rev. Lett. 96 126801
[15]	Blanter Y M and Büttiker M 1998 Europhys. Lett. 42 535
[16]	Sablikov V A, Polyakov S V and Büttiker M 2000 Phys. Rev. B 61 13763
[17]	Sablikov V A and Shchamkhalova B S 1998 Phys. Rev. B 58 13847
[18]	Quan J, Tian Y, Zhang J and Shao L X 2011 Physica B: Condens. Matter 406 1607
[19]	Yacoby A, Stormer H L, Wingreen N S, Pfeiffer L N, Baldwin K W and West K W 1996 Phys. Rev. Lett. 77 4612

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