Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(6): 068503    DOI: 10.1088/1674-1056/22/6/068503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

Wang Chong (王冲)a b, He Yun-Long (何云龙)a b, Zheng Xue-Feng (郑雪峰)a b, Ma Xiao-Hua (马晓华)a b, Zhang Jin-Cheng (张进成)a b, Hao Yue (郝跃)a b
a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
b The Institute of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  AlGaN/GaN high electron mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and the Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMT exhibits current-gain cutoff frequency (fT) of 10 GHz and power gain cutoff frequency (fmax) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the characteristics of C-V are measured, and the gate interface characteristics of the AZO-gated devices are investigated by C-V dual sweep.
Keywords:  AlGaN/GaN      high electron mobility transistor      Al-doped ZnO  
Received:  21 September 2012      Revised:  05 December 2012      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))  
Fund: Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. K50510250003 and K50510250006).
Corresponding Authors:  Wang Chong     E-mail:  wangchong197810@hotmail.com

Cite this article: 

Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO 2013 Chin. Phys. B 22 068503

[1] Masataka H, Toshiaki M and Takashi M 2006 IEEE Electron. Dev. Lett. 27 16
[2] Sun Y F, Sun J D, Zhang X Y, Qin H, Zhang B S and Wu D M 2012 Chin. Phys. B 21 108504
[3] Wager J F 2003 Science 300 1245
[4] Fan C, Chen T S, Yang L J, Feng O, Jiao S L, Wu Y F and Ye Y T 2009 J. Semicond. 30 105009
[5] Meneghini M, Ronchi N, Stocco A, Meneghesso G, Mishra U K, Pei Y and Zanoni E 2011 IEEE T. Electron. Dev. 58 2996
[6] Pei Y, Vampola K J, Chen Z, Chu R M, DenBaars S P and Mishra U K 2009 IEEE Electron Dev. Lett. 30 439
[7] Kim D C, Jung B O, Kwon Y H and Cho H K 2011 J. Electrochem. Soc. 159 10
[8] Dong B Z, Hu H, Fang G J, Zhao X Z, Zheng D Y and Sun Y P 2008 J. Appl. Phys. 103 073711
[9] Chen Z Q, Liu H M, Liu Y P, Chen W, Luo Z Q and Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese)
[10] Lee C S, Chou B Y and Hsu W C 2011 IEEE Trans. Electron Dev. 58 725
[11] Mahajan A, Arafa M, Fay P, Caneau C and Aesida I 1997 IEEE Trans. Electron Dev. 18 284
[12] Lee C S and Chou B Y 2010 Electrochem. Solid-State Lett. 13 58
[13] Selvaraj S L, Ito T, Terada Y and Egawa T 2007 Appl. Phys. Lett. 90 173506
[14] Wang C, Feng Q, Hao Y and Wan H 2006 Acta Phys. Sin. 55 6085 (in Chinese)
[15] Zhou Y G, Shen B, Yu H Q, Liu J, Zhou H M, Zhang R, Shi Y, Zheng Y D, Someya T and Arakawa Y 2002 Chin. Phys. Lett. 19 1172
[16] Chappel D C, Smith J P, Taylor S, Eccleston W, Das M K, Cooper J A and Melloch M R 1997 Electron. Lett. 33 97
[17] Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y and Yang L A 2009 Chin. Phys. B 18 3014
[1] Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate
Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[2] Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068501.
[3] Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 057301.
[4] Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 058505.
[5] High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027301.
[6] High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications
Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027103.
[7] Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Chin. Phys. B, 2022, 31(12): 127701.
[8] Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Chin. Phys. B, 2022, 31(11): 117301.
[9] A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.
[10] Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology
Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(1): 018502.
[11] Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch
Jia-Le Tang(唐家乐) and Chao Liu(刘超). Chin. Phys. B, 2022, 31(1): 018101.
[12] C band microwave damage characteristics of pseudomorphic high electron mobility transistor
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇). Chin. Phys. B, 2021, 30(9): 098502.
[13] High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz
Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(8): 087102.
[14] Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(5): 057302.
[15] Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(4): 040502.
No Suggested Reading articles found!