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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO |
Wang Chong (王冲)a b, He Yun-Long (何云龙)a b, Zheng Xue-Feng (郑雪峰)a b, Ma Xiao-Hua (马晓华)a b, Zhang Jin-Cheng (张进成)a b, Hao Yue (郝跃)a b |
a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China; b The Institute of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract AlGaN/GaN high electron mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and the Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMT exhibits current-gain cutoff frequency (fT) of 10 GHz and power gain cutoff frequency (fmax) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the characteristics of C-V are measured, and the gate interface characteristics of the AZO-gated devices are investigated by C-V dual sweep.
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Received: 21 September 2012
Revised: 05 December 2012
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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Fund: Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. K50510250003 and K50510250006). |
Corresponding Authors:
Wang Chong
E-mail: wangchong197810@hotmail.com
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Cite this article:
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO 2013 Chin. Phys. B 22 068503
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