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One-dimensional diffusion of vacancies on Sr/Si(100)-c(2×4) surface |
| Yang Jing-Jing (杨景景)a, Du Wen-Han (杜文汉)b |
a Changzhou Institute of Technology, Changzhou 213002, China;
b Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China |
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Abstract An Sr/Si(100)-c(2×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by STS. The STM images of this surface shows that it is bias-voltage dependent and an atomic resolution image can be obtained at an empty state under a bias voltage of 1.5 V. Furthermore, one-dimensional (1D) diffusion of vacancies can be found in the room-temperature STM images. Sr vacancies diffuse along the valley channels, which are constructed by silicon dimers in the surface. Weak interaction between Sr and silicon dimers, low metal coverage, surface vacancy, and energy of thermal fluctuation at room temperature all contribute to this 1D diffusion.
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Received: 18 August 2012
Revised: 07 November 2012
Accepted manuscript online:
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PACS:
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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73.20.At
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(Surface states, band structure, electron density of states)
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81.16.-c
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(Methods of micro- and nanofabrication and processing)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60771066). |
Corresponding Authors:
Du Wen-Han
E-mail: whdu@mail.ustc.edu.cn
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Cite this article:
Yang Jing-Jing (杨景景), Du Wen-Han (杜文汉) One-dimensional diffusion of vacancies on Sr/Si(100)-c(2×4) surface 2013 Chin. Phys. B 22 066801
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