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Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition |
Liu Bo (刘波)a, Zhang Sen (张森)b, Yin Jia-Yun (尹甲运)a, Zhang Xiong-Wen (张雄文)a, Dun Shao-Bo (敦少博)a, Feng Zhi-Hong (冯志红)a, Cai Shu-Jun (蔡树军)a |
a Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China; b School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637371, Singapore |
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Abstract The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated. The characteristics of AlN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM). It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-AlN buffer layer. We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.
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Received: 10 October 2012
Revised: 25 October 2012
Accepted manuscript online:
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PACS:
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71.55.Eq
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(III-V semiconductors)
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78.66.Fd
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(III-V semiconductors)
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73.21.Ac
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(Multilayers)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876009). |
Corresponding Authors:
Liu Bo
E-mail: liub.hsri@foxmail.com
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Cite this article:
Liu Bo (刘波), Zhang Sen (张森), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Dun Shao-Bo (敦少博), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军) Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition 2013 Chin. Phys. B 22 057105
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