High sensitivity Hall devices with AlSb/InAs quantum well structures

doi:10.1088/1674-1056/22/5/057106

Abstract AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm²·V^-1·s^-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

Keywords: antimonide semiconductors quantum well molecular beam epitaxy

Received: 19 September 2012
Revised: 23 October 2012
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	85.30.Fg	(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
	73.40.-c	(Electronic transport in interface structures)

Fund: Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences, China (Grant No. ISCAS2009T04), the National Natural Science Foundation of China (Grant Nos. 61204012 and 61274049), the Beijing Natural Science Foundation of Beijing, China (Grant No. 2112040), and the Beijing Nova Program, China (Grant No. 2010B056).

Corresponding Authors: Zhang Yang
E-mail: zhang_yang@semi.ac.cn

Cite this article:

Zhang Yang (张杨), Zhang Yu-Wei (张雨溦), Wang Cheng-Yan (王成艳), Guan Min (关敏), Cui Li-Jie (崔利杰), Li Yi-Yang (李弋洋), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱战平), Zeng Yi-Ping (曾一平) High sensitivity Hall devices with AlSb/InAs quantum well structures 2013 Chin. Phys. B 22 057106

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