Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

doi:10.1088/1674-1056/22/2/027702

Abstract A comparative study of two kinds of oxidants (H₂O and O₃) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO_x) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO_x films are studied. The preliminary testing results indicate that the impurity level of HfAlO_x films grown with both H₂O and O₃ used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO_x film. Additional thermal annealing effects on the properties of HfAlO_x films grown with different oxidants are also investigated.

Keywords: HfAlO_x atomic layer deposition oxidants annealing

Received: 16 July 2012
Revised: 22 August 2012
Accepted manuscript online:

PACS:	77.55.D-
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).

Corresponding Authors: Fan Ji-Bin
E-mail: jbfan@mail.xidian.edu.cn

Cite this article:

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃) Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition 2013 Chin. Phys. B 22 027702

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Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

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Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition