Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

doi:10.1088/1674-1056/22/10/106802

Abstract We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

Keywords: GaN light-emitting diode (LED) undercut

Received: 05 February 2013
Revised: 15 April 2013
Accepted manuscript online:

PACS:	68.35.B-	(Structure of clean surfaces (and surface reconstruction))
	68.55.-a	(Thin film structure and morphology)
	81.65.Cf	(Surface cleaning, etching, patterning)
	81.40.Rs	(Electrical and magnetic properties related to treatment conditions)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science and Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

Corresponding Authors: He Miao, Chen Hong
E-mail: herofate@126.com;hchen@aphy.iphy.ac.cn

Cite this article:

Wang Bo (王波), Su Shi-Chen (宿世臣), He Miao (何苗), Chen Hong (陈弘), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟), Wang Qiao (王巧), Chen Yu-Long (陈虞龙), Gao You (高优), Zhang Li (张力), Zhu Ke-Bao (朱克宝), Lei Yan (雷严) Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching 2013 Chin. Phys. B 22 106802

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Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

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