Effects of microwave pulse-width damage on a bipolar transistor

doi:10.1088/1674-1056/21/5/058502

Abstract This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the absorbed energy, E, required to cause the device failure on the pulse width $\tau$ are obtained in the nanosecond region by utilizing the curve fitting method. A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out. By means of a two-dimensional simulator, ISE-TCAD, the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively. The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different, while only one hot spot exists under the injection of dc pulses. The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy, respectively. The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.

Keywords: bipolar transistor high power microwave pulse width effects

Received: 01 November 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

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Ma Zhen-Yang(马振洋), Chai Chang-Chun(柴常春), Ren Xing-Rong(任兴荣), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), and Zhao Ying-Bo(赵颖博) Effects of microwave pulse-width damage on a bipolar transistor 2012 Chin. Phys. B 21 058502

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