Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature

doi:10.1088/1674-1056/21/5/058101

Abstract A series of diamond crystals doped with hydrogen is successfully synthesized using LiH as the hydrogen source in a catalyst-carbon system at a pressure of 6.0 GPa and temperature ranging from 1255℃ to 1350℃. It is shown that the high temperature plays a key role in the incorporation of hydrogen atoms during diamond crystallization. Fourier transform infrared micro-spectroscopy reveals that most of the hydrogen atoms in the synthesized diamond are incorporated into the crystal structure as sp³--CH₂-symmetric (2850 cm^-1) and sp³ CH₂-antisymmetric vibrations (2920 cm^-1). The intensities of these peaks increase gradually with an increase in the content of the hydrogen source in the catalyst. The incorporation of hydrogen impurity leads to a significant shift towards higher frequencies of the Raman peak from 1332.06 cm^-1 to 1333.05 cm^-1 and gives rise to some compressive stress in the diamond crystal lattice. Furthermore, hydrogen to carbon bonds are evident in the annealed diamond, indicating that the bonds that remain throughout the annealing process and the vibration frequencies centred at 2850 and 2920 cm^-1 have no observable shift. Therefore, we suggest that the sp³ C--H bond is rather stable in diamond crystals.

Keywords: high pressure and high temperature hydrogen-doped diamond crystals annealing LiH additives

Received: 07 September 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	81.05.ug	(Diamond)
	61.72.U-	(Doping and impurity implantation)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172089) and the Program for New Century Excellent Talents in University of China.

Cite this article:

Li Yong(李勇), Jia Xiao-Peng(贾晓鹏), Hu Mei-Hua(胡美华), Liu Xiao-Bing(刘晓兵), Yan Bing-Min(颜丙敏), Zhou Zhen-Xiang(周振翔), Zhang Zhuang-Fei(张壮飞), and Ma Hong-An(马红安) Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature 2012 Chin. Phys. B 21 058101

[1]	Kim Y D, Choi W, Wakimoto H, Usami S, Tomokage H and Ando T 1999 Appl. Phys. Lett. 75 3219
[2]	Zhang W J, Wu Y, Wong W K, Meng X M, Chan C Y, Bello I, Lifshitz Y and Lee S T 2003 Appl. Phys. Lett. 83 3365
[3]	Shin D C, Sarada B V, Tryk D A and Fujishima A 2003 Anal. Chem. 75 530
[4]	Weerdt F D and Kupriyanov I N 2002 Diamond Relat. Mater. 11 714
[5]	Kiflawi I, Fisher D, Kanda H and Sittas G 1996 Diamond Relat. Mater. 5 1516
[6]	Jr Kindlein W, Livi R P, Balzaretti N M and Jornada J A H 2000 Diamond Relat. Mater. 9 22
[7]	Kania P and Oelhafen P 1995 Diamond Relat. Mater. 4 425
[8]	Dai Y, Yan C X, Li A Y, Zhang Y and Han S H 2005 Carbon 43 1009
[9]	Landstrass M I and Ravi K V 1989 Appl. Phys. Lett. 55 1391
[10]	Fuchs F, Wild C, Schwarz K and Koidl P 1995 Diamond Relat. Mater. 4 652
[11]	Connell S H, Sellschop J P F, Butler J E, Maclear R D, Doyle B P and Machi I Z 1998 Diamond Relat. Mater. 7 1714
[12]	Teukam Z, Ballutaud D, Jomard F, Chevallier J, Bernard M and Deneuville A 2003 Diamond Relat. Mater. 12 647
[13]	Ping Loh K, Nishitani-Gamo M, Sakaguchi I, Taniguchi T and Ando T 1999 Diamond Relat. Mater. 8 1296
[14]	Huang G F, Jia X P, Li S S, Zhang Y F, Li Y, Zhao M and Ma H A 2010 Chin. Phys. B 19 118101
[15]	Qin J M, Zhang Y, Cao J M and Tian L F 2011 Acta Phys. Sin. 60 58012 (in Chinese)
[16]	Strong H M and Wentorf J R H 1972 Naturwissenschaften 59 1
[17]	Strong H M and Chrenko R M 1971 J. Phys. Chem. 75 1838
[18]	Kanda H 2000 Braz. J. Phys. 30 482
[19]	Shigley J E, Abbaschian R and Clarke C 2002 Gem and Gemology 38 301
[20]	Yarnell A 2004 Chem. Eng. News 82 35
[21]	Sumiya H, Toda N and Satoh S 2000 New Diamond Front. Carbon Technol 10 233
[22]	Du Y H, Ji X R, Yang X X, Gong X L, Yang D P, Su Z P and Zhang T C 2007 Diamond Relat. Mater. 16 1475
[23]	Liang Z Z, Jia X P, Ma H A, Zang C Y, Zhu P W, Guan Q F and Kanda H 2005 Diamond Relat. Mater. 14 1932
[24]	Coudberg P and Catherine Y 1987 Thin Solid Films 146 93
[25]	McNamara K M, Williams B E, Gleason K K and Scruggs B E 1994 J. Appl. Phys. 76 2466
[26]	Field J E 1992 The Properties of Natural and Synthetic diamond (London:Academic) P36-41, P81-179
[27]	Kiflawi I, Mayer A E, Spear P M, van Wyk J A and Woods G S 1994 Philos. Mag. B 9 1141
[28]	Anthony T R 1995 Diamond Relat. Mater. 4 1346
[29]	Chrenko R M, Tuft R E and Strong H M 1977 Nature 270 141
[30]	Zou Y G, Liu B B and Liu Y C 2007 Acta Phys. Sin. 56 5172 (in Chinese)
[31]	Qin J M, Zhang Y, Cao J M, Tian L F, Dong Z W and Li Y 2011 Acta Phys. Sin. 60 36105 (in Chinese)
[32]	Zhou M, Zhang P, Liu T C, Xu D P, Jiang Y H, Gao S Q and Li Z W 2010 Acta Phys. Sin. 59 210 (in Chinese)
[33]	Wu B J, Han Y H, Hang G, Liu C L, Wang Y and Gao C X 2010 Acta Phys. Sin. 59 4235 (in Chinese)
[34]	Sutherland G B B M, Blackwell D E and Simeral W G 1954 Nature 174 901

[1]	Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Chin. Phys. B, 2022, 31(9): 098503.
[2]	Introducing voids around the interlayer of AlN by high temperature annealing Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Chin. Phys. B, 2022, 31(7): 076104.
[3]	In-situ ultrasonic calibrations of pressure and temperature in a hinge-type double-stage cubic large volume press Qingze Li(李青泽), Xiping Chen(陈喜平), Lei Xie(谢雷), Tiexin Han(韩铁鑫), Jiacheng Sun(孙嘉程), and Leiming Fang(房雷鸣). Chin. Phys. B, 2022, 31(6): 060702.
[4]	Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature Guang-Tong Zhou(周广通), Yu-Hu Mu(穆玉虎), Yuan-Wen Song(宋元文), Zhuang-Fei Zhang(张壮飞), Yue-Wen Zhang(张跃文), Wei-Xia Shen(沈维霞), Qian-Qian Wang(王倩倩), Biao Wan(万彪), Chao Fang(房超), Liang-Chao Chen(陈良超), Ya-Dong Li(李亚东), and Xiao-Peng Jia(贾晓鹏). Chin. Phys. B, 2022, 31(6): 068103.
[5]	Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond Yong Li(李勇), Xiaozhou Chen(陈孝洲), Maowu Ran(冉茂武), Yanchao She(佘彦超), Zhengguo Xiao(肖政国), Meihua Hu(胡美华), Ying Wang(王应), and Jun An(安军). Chin. Phys. B, 2022, 31(4): 046107.
[6]	Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Chin. Phys. B, 2022, 31(1): 014402.
[7]	Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Chin. Phys. B, 2021, 30(9): 097302.
[8]	In-situ TEM observation of the evolution of helium bubbles in Mo during He⁺ irradiation and post-irradiation annealing Yi-Peng Li(李奕鹏), Guang Ran(冉广), Xin-Yi Liu(刘歆翌), Xi Qiu(邱玺), Qing Han(韩晴), Wen-Jie Li(李文杰), and Yi-Jia Guo(郭熠佳). Chin. Phys. B, 2021, 30(8): 086109.
[9]	Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇). Chin. Phys. B, 2021, 30(7): 077303.
[10]	Fabrication and characterization of Al-Mn superconducting films for applications in TES bolometers Qing Yu(余晴), Yi-Fei Zhang(张翼飞), Chang-Hao Zhao(赵昌昊), Kai-Yong He(何楷泳), Ru-Tian Huang(黄汝田), Yong-Cheng He(何永成), Xin-Yu Wu(吴歆宇), Jian-She Liu(刘建设), and Wei Chen(陈炜). Chin. Phys. B, 2021, 30(7): 077402.
[11]	Effects of post-annealing on crystalline and transport properties of Bi₂Te₃ thin films Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Chin. Phys. B, 2021, 30(6): 067307.
[12]	Understanding the synergistic effect of mixed solvent annealing on perovskite film formation Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Chin. Phys. B, 2021, 30(6): 068103.
[13]	Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility Xin-Yuan Miao(苗辛原), Hong-An Ma(马红安), Zhuang-Fei Zhang(张壮飞), Liang-Chao Chen(陈良超), Li-Juan Zhou(周丽娟), Min-Si Li(李敏斯), and Xiao-Peng Jia(贾晓鹏). Chin. Phys. B, 2021, 30(6): 068102.
[14]	Quantum annealing for semi-supervised learning Yu-Lin Zheng(郑玉鳞), Wen Zhang(张文), Cheng Zhou(周诚), and Wei Geng(耿巍). Chin. Phys. B, 2021, 30(4): 040306.
[15]	Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing Limeng Zhang(张李萌), Jinbo Chen(陈锦波), Jierong Gu(顾杰荣), Yixiao Gao(高一骁), Xiang Shen(沈祥), Yimin Chen(陈益敏), and Tiefeng Xu(徐铁峰). Chin. Phys. B, 2021, 30(3): 034210.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature

Cite this article:

Online attention