Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

doi:10.1088/1674-1056/21/5/057303

Abstract A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.

Keywords: graphene SiC layer sapphire substrate

Received: 14 October 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	73.22.Pr	(Electronic structure of graphene)
	74.25.nd	(Raman and optical spectroscopy)
	78.70.Dm	(X-ray absorption spectra)
	72.80.Sk	(Insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872128), the Anhui Provincial Natural Science Foundation, China (Grant No. 11040606M64), and the Anhui Provincial Natural Science Foundation of Higher Education Institutions, China (Grant No. KJ2010B189).

Cite this article:

Tang Jun(唐军), Kang Chao-Yang(康朝阳), Li Li-Min(李利民), Liu Zhong-Liang(刘忠良), Yan Wen-Sheng(闫文盛), Wei Shi-Qiang(韦世强), and Xu Peng-Shou(徐彭寿) Graphene films grown on sapphire substrates via solid source molecular beam epitaxy 2012 Chin. Phys. B 21 057303

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Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

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