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Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor |
Zhuang Xiang(庄翔)†, Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel lateral double-di?used metal oxide semiconductor (LDMOS). Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer, 50-μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.
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Received: 24 July 2011
Revised: 08 October 2011
Accepted manuscript online:
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PACS:
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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73.61.Ng
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(Insulators)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60906038). |
Corresponding Authors:
Zhuang Xiang,zhuangxiang19861226@126.com
E-mail: zhuangxiang19861226@126.com
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Cite this article:
Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor 2012 Chin. Phys. B 21 037305
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[1] Auberton-Herve A J 1996 Proc. IEDM p. 3[2] Qiao M, Jiang L L, Wang M, Huang Y, Liao H, Liang T, Shun Z, Zhang B, Li Z J, Huang G Z, Zhao Y Y, Lai L, Hu X, Zhuang X, Luo X R and Wang Z 2011 Proc. ISPSD p. 180[3] Luo X R, Wang Y G, Deng H and Udrea F 2010 Chin. Phys. B 19 077306[4] Hu S D, Zhang B, Li Z J and Luo X R 2010 Chin. Phys. B 19 037303[5] van der Pol J A, Ludikhuize A W, Huizing H G A, van Velzen B, Hueting R J E, Mom J F, van Lijnschoten G, Hessels G J J, Hooghoudt E F, van Huizen R, Swanenberg M J, Egbers J H H A, van den Elshout F, Koning J J, Schligtenhorst H and Soeteman J 2000 Proc. ISPSD p. 327[6] Xilin An J, Sinha S P, Wei A, Pelella M M and Kepler N J 2009 Proc. ICSICT. p. 643[7] Nakagawa A, Yasuhara N, Omura I, Yamaguchi Y, Ogura T and Matsudai T 1992 Proc. IEDM p. 229[8] Qiao M, Zhang B, Xiao Z Q, Fang J and Li Z J 2008 Proc. ISPSD p. 52[9] Hu S D, Zhang B and Li Z J 2009 Chin. Phys. B 18 315[10] Kobayashi K, Yanagigawa H, Mori K, Yamanaka S and Fujiwara A 1998 Proc. ISPSD p. 141[11] Wessels P, Swanenberg M, Zwol H V, Krabbenborg B, Boezen H, Berkhout M and Grakist A 2007 Solid State Electron. 51 195[12] Qiao M, Zhang B, Li Z J, Fang J and Zhou X D 2007 Acta Phys. Sin. 56 3990 (in Chinese)[13] Schwantes S, Florian T, Graf M, Dietz F and Dudek V 2004 Proc. ESSDERC p. 253[14] Schwantes S, Florian T, Stephan T, Graf M and Dudek V 2005 Transation on Electron Devices 52 1649[15] Bi J S, Song L M, Hai C H and Han Z S 2008 Journal of Semiconductors 29 2148[16] Schwantes S, Furthaler J, Schauwecker B, Dietz F, Graf M and Dudek V 2006 Transactions on Device and Materials Reliability 6 377[17] Qiao M, Zhang B, Li Z J and Fang J 2007 Electron. Lett. 431231[18] Yang X M, Zhang B, Luo X R and Li T F 2009 Proc. ASEMD p. 112 |
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