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Chin. Phys. B, 2012, Vol. 21(3): 037305    DOI: 10.1088/1674-1056/21/3/037305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor

Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel lateral double-di?used metal oxide semiconductor (LDMOS). Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer, 50-μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.
Keywords:  silicon on insulator      breakdown voltage      back-gate voltage       lateral double-diffused metal oxide semiconductor   
Received:  24 July 2011      Revised:  08 October 2011      Accepted manuscript online: 
PACS:  73.40.Ty (Semiconductor-insulator-semiconductor structures)  
  73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)  
  73.61.Ng (Insulators)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60906038).
Corresponding Authors:  Zhuang Xiang,zhuangxiang19861226@126.com     E-mail:  zhuangxiang19861226@126.com

Cite this article: 

Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor 2012 Chin. Phys. B 21 037305

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