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Nonlinear dynamics in wurtzite InN diodes under terahertz radiation |
| Feng Wei(冯伟)† |
| Department of Physics, Jiangsu University, Zhenjiang 212013, China |
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Abstract We carry out a theoretical study of nonlinear dynamics in terahertz-driven n+nn+ wurtzite InN diodes by using time-dependent drift diffusion equations. A cooperative nonlinear oscillatory mode appears due to the negative differential mobility effect, which is the unique feature of wurtzite InN aroused by its strong nonparabolicity of the $\varGamma_1$ valley. The appearance of different nonlinear oscillatory modes, including periodic and chaotic states, is attributed to the competition between the self-sustained oscillation and the external driving oscillation. The transitions between the periodic and chaotic states are carefully investigated using chaos-detecting methods, such as the bifurcation diagram, the Fourier spectrum and the first return map. The resulting bifurcation diagram displays an interesting and complex transition picture with the driving amplitude as the control parameter.
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Received: 09 September 2011
Revised: 03 October 2011
Accepted manuscript online:
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PACS:
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73.61.Ey
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(III-V semiconductors)
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73.50.Fq
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(High-field and nonlinear effects)
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85.30.Fg
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(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Project supported by Jiangsu University Initial funding for advanced talents, China (Grant No. 11JDG037). |
Corresponding Authors:
Feng Wei,xfhe@ujs.edu.cn
E-mail: xfhe@ujs.edu.cn
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Cite this article:
Feng Wei(冯伟) Nonlinear dynamics in wurtzite InN diodes under terahertz radiation 2012 Chin. Phys. B 21 037306
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