Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

doi:10.1088/1674-1056/21/3/037105

Abstract The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tanθ and f is higher than that with a higher production of tanθ and f.

Keywords: GaN Patterned sapphire substrate light emitting diode

Received: 26 November 2011
Revised: 15 March 2011
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61006084 and 61076119) and the Technical Corporation Innovation Foundation of Suzhou Industrial Park, China (Grant No. SG0962).

Corresponding Authors: Wang Huai-Bing,hbwang2006@sinano.ac.cn
E-mail: hbwang2006@sinano.ac.cn

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Huang Xiao-Hui(黄小辉), Liu Jian-Ping(刘建平), Fan Ya-Ming(范亚明), Kong Jun-Jie(孔俊杰), Yang Hui(杨辉), and Wang Huai-Bing(王怀兵) Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape 2012 Chin. Phys. B 21 037105

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Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

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